Intense laser field effect on confined hydrogenic impurities in quantum semiconductors

Abstract

Abstract The influence of an intense high‐frequency laser field on the binding energy of a shallow neutral donor impurity in a quantum semiconductor structure such as GaAs/AlGaAs is reported. By making use of a nonperturbative theory and the variational approach it was found that for an on‐centre hydrogenic impurity in the given quantum well, the binding energy for different well widths increases, reaches a maximum, and then decreases quite rapidly with increasing laser field amplitude of the quiver motion of the electron.