"Size Effect" in Electrical Resistivity Measurements on Single Crystals of High-Purity Tin at Liquid Helium Temperatures

Abstract

The "size effect" in the electrical resistivity of a single crystal of high purity tin has been observed by reducing the cross-sectional area of the crystal by chemical etching. Assuming 100% diffuse scattering of the electrons at the boundaries, the mean free path is 0.45 mm, $\frac{{R}_{4.2\ifmmode^\circ\else\textdegree\fi{}\mathrm{K}}}{{R}_{273\ifmmode^\circ\else\textdegree\fi{}\mathrm{K}}}=3.5\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}5}$, and $\ensuremath{\rho}l=2.3\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}11}$ ohm ${\mathrm{cm}}^{2}$ along the $c$ axis.