ZnSb and GaSb Bulk Amorphous Semiconductors: Transport Properties

Abstract

Abstract Temperature dependencies of the conductivity and thermopower of bulk amorphous semiconducting alloys Zn 41 Sb 59 and Ga 100−x Sb x with 47.5 < x < 55 were measured at 80 to 370 K and 120 to 370 K, respectively. The samples were prepared by solid state amorphization of the quenched high pressure phases occurring on heating at ambient pressure. The electrical properties of nonstoichiometric a‐Zn 41 Sb 59 are well described by the conventional Mott‐Davis model. Those of both stoichiometric a‐GaSb and nonstoichiometric a‐Ga 100−x Sb x , appear to be more unusual and require a modification of the model.