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Observation of confinement-dependent exciton binding energy of GaN quantum dots
129
Citations
15
References
1998
Year
Quantum SciencePhotoluminescence EmissionPhotoluminescenceEngineeringPhysicsNanoelectronicsQuantum DeviceApplied PhysicsQuantum DotsConfinement-dependent ExcitonAluminum Gallium NitrideGan Power DeviceCoulomb EnergyCategoryiii-v SemiconductorQuantum Dot SizeOptoelectronics
The photoluminescence emission peak energy of GaN quantum dots was observed to shift to higher energy with decreasing quantum dot size. This effect was found to be a combination of a blueshift from the confinement-induced shift of the electronic levels and a redshift from the increased Coulomb energy induced by a compression of the exciton Bohr radius. From this observation, absolute values of the exciton binding energy as a function of quantum dot size are determined.
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