Microstructure Development in RuO ₂ ‐Glass Thick‐Film Resistors and Its Effect on the Electrical Resistivity

Abstract

Microstructure development in RuO 2 ‐glass thick‐film resistors has been studied by optical microscopy with special emphasis on the effect of glass particle size and mixing and firing conditions. The microstructure development has been characterized by the coalescence of glass grains, infiltration of glass into RuO 2 particle aggregates, and agglomeration of RuO 2 particles. The resistivity‐firing temperature relationship has been correlated with the microstructure development.