Interdot carrier transfer in asymmetric bilayer InAs∕GaAs quantum dot structures

Abstract

Transient photoluminescence from a series of asymmetric InAs quantum-dot bilayers with a GaAs barrier layer thickness varying from 30 to 60 monolayers between the quantum-dot planes is investigated. The interdot carrier transfer process is analyzed. In the framework of a three-level system, interdot carrier transfer times between 200 and 2500ps are derived and compared with similar data from the literature. Within the semiclassical Wentzel–Kramers–Brillouin approximation, the observed “transfer time-barrier thickness-relation” supports nonresonant tunneling as the microscopic carrier transfer mechanism.