Achievement of ultrahigh quality factors in GaAs photonic crystal membrane nanocavity

Abstract

The authors realized an ultrahigh quality factor nanocavity in a GaAs membrane with the highest loaded Q reported to date of 250 000 in a side-coupled cavity-waveguide system. This result could be obtained using an original aluminum-free material system combined with a carefully adjusted fabrication technology, yielding a device with small roughness and very good verticality of holes as well as small disorder. The authors show that the intrinsic Q factor is around 3.0×105 using a coupled-mode model.