Growth of single-phase In2Se3 by using metal organic chemical vapor deposition with dual-source precursors

Abstract

Single-phase γ-In2Se3 thin films have been prepared by the metal organic chemical vapor deposition technique using dual-source precursors, trimethylindium, and hydrogen selenide to obtain a different VI/III ratio by independent adjustment of the precursors’ flow rate. 2in Si(111) and Si(100) wafers are used as substrates. The films have been characterized by x-ray diffraction and scanning electron microscopy. The single-phase γ-In2Se3 films can be grown on both Si(111) and Si(100) substrates. The optical properties of the films have been studied by photoluminescence measurements. Strong exciton emissions were observed at around 2.14eV at 20K. The band gap of γ-In2Se3 at room temperature is estimated at approximately 1.93eV.