Influence of Strain on the Conduction Band Structure of Strained Silicon Nanomembranes

Abstract

The influence of in-plane biaxial strain on the conduction bands of Si is explored using elastically strained Si(001) nanomembranes and high-resolution x-ray absorption measurements with electron yield detection. The strain-induced splitting of the conduction band minimum and the energy shifts of two higher conduction bands near L1 and L3 are clearly resolved. The linear increase of the splitting of the conduction band minimum with increasing strain and the nonlinear shift of the L1 point toward the conduction band minimum agree quantitatively with current theories.