Ion beam-induced chemical vapor deposition with hexamethyldisilane for hydrogenated amorphous silicon carbide and silicon carbonitride films - Concepedia

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Ion beam-induced chemical vapor deposition with hexamethyldisilane for hydrogenated amorphous silicon carbide and silicon carbonitride films

30

Citations

20

References

2003

Year

Takaomi Matsutani, Tatsuya Asanuma, Chang Liu, Masato Kiuchi, Takae Takeuchi

Surface and Coatings Technology

Materials ScienceIon ImplantationEngineeringApplied PhysicsSilicon Carbonitride FilmsAmorphous Silicon CarbideThin FilmsChemical Vapor DepositionSilicon On InsulatorCarbide

References

	Year	Citations

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