Continuous method for measuring the electro-optic coefficient in Bi_12SiO_20 and Bi_12GeO_20

Abstract

A technique for accurate measurement of the linear electro-optic coefficient(s) in crystals that are simultaneously optically active and birefringent is described. It is shown that this technique provides a direct method of measuring field-induced birefringence and so can form the basis of a Bi(12)SiO(20) (or Bi(12)GeO(20)) sensor arrangement. The high degree of accuracy obtained in the measurements of the linear electro-optic coefficient in Bi(12)SiO(20) and Bi(12)GeO(20) crystals indicates the particular suitability of these materials in electric-field and voltage-sensor systems with a high dynamic range and for possible waveguiding applications.