Siloxane and Carbosiloxane Based Dendrimers: Synthesis, Reaction Chemistry, and Potential Applications

Abstract

This article focuses on recent developments made in the field of siloxane and carbosiloxane dendrimers with the silicon atoms as the branching (1 → 2, 1 → 3, or 1 → 4) points. It attempts to treat in a comprehensive way the divergent growth method for the synthesis of Si–O- and Si–O–C-based dendrimers, including their reaction chemistry, their theoretical and physical descriptions, as well as their potential applications in the area of materials science.