Applied Physics Letters · 1968 · 39 citations · 5 references
EngineeringChemistryMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor MaterialsOptoelectronic DevicesPhotoelectron SpectroscopyWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsPhotoelectric EffectWide-bandgap OxidesWork FunctionWork Function DeterminationWork Function Difference
Photoelectric measurements on cleaved p+ InP show that a process of cesiation and oxidation can produce a work function lower than the InP bandgap. Efficient photoemission results, with luminous efficiencies of 450 μA/lumen or better, and a threshold at 1.24 eV (1 μ).
5
GaAs-Cs: A new type of photoemitter
Jens Scheer · Solid State Communications · 1965 · 273 citations
Exciton Absorption and Emission in InP
W. J. Turner, W. Reese, G. D. Pettit · Physical Review · 1964 · 209 citations
Photoelectric Emission and Work Function of InP
T.E. Fischer · Physical Review · 1966 · 89 citations
Natural Sciences, Materials Science, Condensed Matter Physics +16