Temperature dependence of Hall mobility in indium–tin oxide thin films

Abstract

Carrier concentrations and mobilities of vacuum-prepared indium–tin oxide films have been measured to determine the effects of annealing. The apparent variation of electron mobility with temperature in these films is interpreted in terms of a grain-boundary barrier model. No grain growth was observed in the films studied; all changes in electron density and mobility may be explained by oxygen diffusion in the grain boundaries and, from them, into the grains themselves.