Low loss, thin p-clad 980-nm InGaAs semiconductor laser diodes with an asymmetric structure design

Abstract

Thin p-clad InGaAs ridge waveguide quantum-well lasers having an asymmetric structure design were fabricated. The internal absorption coefficient is as low as 2.5 cm/sup -1/, due to the restricted field extension in the 0.3-μm-thick p-type top AlGaAs cladding layer. Ti-Pt-Au metallization is used outside the ridge to provide adherence on the oxide while Au directly contacts the ridge region. It is shown that the most likely source of loss in these thin p-clad devices is scattering at the rough interface between Au and the p/sup ++/ top GaAs layer, after ohmic contact heat treatment.