Silicon‐Vacancy Color Centers in Nanodiamonds: Cathodoluminescence Imaging Markers in the Near Infrared

Abstract

Nanodiamonds doped with silicon-vacancy (Si-V) color centers are shown to be a promising candidate for cathodoluminescence (CL) imaging at the nanoscale, providing bright, non-bleaching, narrow-linewidth emission at wavelengths within the near-IR window of biological tissue. CL emission intensity from negative charge-state Si-V centers is greatly enhanced by increasing the nitrogen concentration during nanodiamond growth. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.