Preparation and Dielectric Properties of Low‐Temperature‐Sinterable (Zr _0.8 Sn _0.2 )TiO ₄ Powder

Abstract

Low‐temperature‐sinterable (Zr 0.8 Sn 0.2 )TiO 4 powders were prepared using 3 mol% Zn(NO 3 ) 2 additive and then compared with powders prepared using 3 mol% ZnO additive and no additives. Sintering at 1200°C for 2 h produced a dielectric ceramic with ρ= 98.6% of theoretical density (TD), ɛ r = 38.4, Q × f (GHz) = 42000, and τ f =−1 ppm/°C. Sintering at 1250°C resulted in an excellent dielectric with ρ= 99% of TD, epsilon r = 40.9, Q × f (GHz) = 49000, and τ f =−2 ppm/°C. Scanning electron microscopy showed a microstructure with grains measuring 0.5 to 1 μm, and transmission electron microscopy revealed secondary phase in the grain boundaries.