Physics of thin-film ferroelectric oxides

TLDR

Recent advances in thin‑film ferroelectric oxides focus on film‑specific physics and emerging nanoscale geometries. The review surveys the state of ferroelectric thin‑film applications in electronics, highlighting physics that affect device performance and failure. Mechanisms include first‑principles computational modeling, strain‑engineering of epitaxial films, and physics governing device performance and failure.

Abstract

This review covers the important advances in recent years in the physics of thin film ferroelectric oxides, the strongest emphasis being on those aspects particular to ferroelectrics in thin film form. We introduce the current state of development in the application of ferroelectric thin films for electronic devices and discuss the physics relevant for the performance and failure of these devices. Following this we cover the enormous progress that has been made in the first principles computational approach to understanding ferroelectrics. We then discuss in detail the important role that strain plays in determining the properties of epitaxial thin ferroelectric films. Finally, we look at the emerging possibilities for nanoscale ferroelectrics, with particular emphasis on ferroelectrics in non conventional nanoscale geometries.