High quality narrow GaInAs/InP quantum wells grown by atmospheric organometallic vapor phase epitaxy

Abstract

A series of GaInAs/InP quantum wells from 10 to 135 Å has been grown by atmospheric organometallic vapor phase epitaxy using pressure balancing techniques. These wells exhibit strong exciton peaks at 4 K and have quantized energy shifts of up to 326 meV. These energy shifts are compared with two simple finite well models (Kronig–Penney and envelope function approximation) using a conduction-band offset of Vc≊40% ΔEg(GaInAs) and are in close agreement with the latter model. The full width half-maximum linewidths indicate an average interface roughness of ≊1 monolayer.