Applied Physics Letters · 1986 · 82 citations · 13 references
EngineeringMaterials EngineeringMaterials ScienceCondensed Matter PhysicsOptoelectronicsSemiconductor MaterialsElectronic Band StructureEpitaxial GrowthQuantum ConfinementQuantum OptoelectronicsQuantum WellsSemiconductor HeterostructuresAtomic Energy Level ShiftsConduction BandFull Width At Half MaximumQuantum Well Band StructureQuantum Well GainQuantum Well GrowthQuantum Well Growth TechniquesQuantum Well Structures
A series of GaInAs/InP quantum wells from 10 to 135 Å has been grown by atmospheric organometallic vapor phase epitaxy using pressure balancing techniques. These wells exhibit strong exciton peaks at 4 K and have quantized energy shifts of up to 326 meV. These energy shifts are compared with two simple finite well models (Kronig–Penney and envelope function approximation) using a conduction-band offset of Vc≊40% ΔEg(GaInAs) and are in close agreement with the latter model. The full width half-maximum linewidths indicate an average interface roughness of ≊1 monolayer.
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