Applied Physics Letters · 1992 · 41 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsBarrier PropertiesCurrent-voltage CharacteristicsMetal-semiconductor ContactsNanoelectronicsQuantum TunnelingSuperconducting Thin FilmsAluminum NitrideAnnealingCritical Current DensityCurrent-voltage RelationsJosephson JunctionsJunction Leakage CurrentNitridationTunnel Junctions
We studied Nb junctions with aluminum nitride, AlNx, tunnel barriers formed by plasma nitridation on aluminum film surfaces. The AlNx barrier junctions show current-voltage characteristics with leakage currents small enough and critical current densities large enough for use in Josephson digital circuits. The AlNx barrier junction exhibited improved annealing stability as compared to AlOx barrier junctions. For the AlNx barrier junction, decreases in critical current during annealing at 250 °C are remarkably suppressed.
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S. Hasuo, T. Imamura · Proceedings of the IEEE · 1989 · 58 citations
Engineering, Computer Engineering, Electrical Engineering +12
Y. Wada · Proceedings of the IEEE · 1989 · 34 citations
Engineering, Computer Engineering, Electrical Engineering +16