Chemical vapor deposition-formed <i>p</i>-type ZnO thin films

Abstract

We have fabricated nitrogen-doped zinc oxide (ZnO) films that demonstrate p-type behavior by using metalorganic chemical vapor deposition. In our experiment, diethylzinc is used as a Zn precursor, and NO gas is used to supply both O and N to form a N-doped ZnO (ZnO:N) film. With these precursors, we have routinely reached an N concentration in the ZnO films of about 1–3 at. %. When the N concentration level is higher than 2 at. %, the films demonstrate p-type characteristics. The carrier concentration of the films varies from 1.0×1015 to 1.0×1018 cm−3, and mobilities are mainly in the 10−1 cm2 V−1 s−1 range. The lowest film resistivity achieved is ∼20 Ω cm.