Transport properties under pressure in HgSe

Abstract

Measurements of the Seebeck coefficient or thermoelectric power (TEP) of HgSe at high pressures confirm the existence of an inverted band ordering, similar to that in HgTe. The pressure-induced phase transition from the zincblende- to the cinnabar-type structure, which occurs around 10 kbar, is manifested as a large change in TEP. The temperature behaviour of the resistivity has also been studied in both of these structural modifications. These studies indicate that the energy gap in the high-pressure semiconducting phase decreases with increase of pressure; this is similar to what is observed in the elemental semiconductors Se and Te.