Memory effect of CdSe∕ZnS nanoparticles embedded in a conducting poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene-vinylene] polymer layer

Abstract

Capacitance-voltage (C-V) measurements on Au/a conducting poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene-vinylene] polymer layer containing core/shell CdSe∕ZnS nanoparticles (hybrid layer)/indium tin oxide (ITO) coated glass and Al/hybrid layer/ITO coated glass capacitors at 300K showed metal-insulator-semiconductor behavior with a large flatband voltage shift. This shift was due to the existence of the CdSe∕ZnS nanoparticles, indicative of trapping, storing, and emission of charge carriers in the CdSe∕ZnS nanoparticles. Symmetric and asymmetric C-V characteristics appeared in the Al/hybrid layer/ITO coated glass and Au/hybrid layer/ITO coated glass capacitors, respectively. A dipolar carrier trapping model is proposed to explain the symmetric behavior in the C-V curve.