CuTCNQ resistive nonvolatile memories with a noble metal bottom electrode

Robert Müller, Rik Naulaerts, Joris Billen, Jan Genoe, Paul Heremans

Applied Physics Letters · 2007 · 48 citations · 21 references

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Abstract

Resistive electrical switching of the organic semiconductor Cu-tetracyanoquinodimethane (CuTCNQ) was investigated between gold bottom and aluminum top contacts. Corresponding Au∕CuTCNQ∕Al crossbar memories achieved several thousand write/erase cycles. The switching process was further studied by current-time measurements, and temperature-dependent measurements of the on state conductivity.

References

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