CuTCNQ resistive nonvolatile memories with a noble metal bottom electrode

Abstract

Resistive electrical switching of the organic semiconductor Cu-tetracyanoquinodimethane (CuTCNQ) was investigated between gold bottom and aluminum top contacts. Corresponding Au∕CuTCNQ∕Al crossbar memories achieved several thousand write/erase cycles. The switching process was further studied by current-time measurements, and temperature-dependent measurements of the on state conductivity.