Phase separation and exchange biasing in the ferromagnetic IV-VI semiconductor Ge1−xMnxTe

Abstract

Ferromagnetic Ge1−xMnxTe grown by molecular beam epitaxy with Mn content of xMn≈0.5 is shown to exhibit a strong tendency for phase separation. At higher growth temperatures apart from the cubic Ge0.5Mn0.5Te, a hexagonal MnTe and a rhombohedral distorted Ge0.83Mn0.17Te phase is formed. This coexistence of antiferromagnetic MnTe and ferromagnetic Ge0.5Mn0.5Te results in magnetic exchange-bias effects.