High-Brightness Spin-Polarized Electron Source Using Semiconductor Photocathodes

Abstract

We developed AlGaAs photocathodes with low electron affinity for long negative electron affinity (NEA) lifetime. AlGaAs photocathodes achieved 10 times longer NEA lifetime than conventional NEA-GaAs photocathodes. We estimated the appropriate superlattice structure for small conduction mini band width, high density of state in the conduction band and high splitting energy between the heavy- and light-hole bands by theoretical energy band calculation. We conclude that the AlGaAs–GaAs superlattice semiconductor is a suitable NEA-GaAs photocathode that not only has acceptable NEA lifetime but also fulfills the requirements of small energy spread of photoelectrons, high quantum yield and highly spin-polarized electrons.