Aluminum selective area deposition on Si using diethylaluminumchloride

Abstract

Aluminum deposition on Si was studied using diethylaluminumchloride (DEAlCl) as a new Al chemical vapor deposition source. Selective area deposition was successfully achieved at substrate temperatures of 313–380 °C. The deposition rate was higher than 370 Å/min. Reflectance and resistivity of the deposited films were comparable to those of the evaporated ones. Decomposition experiments suggest that DEAlCl catalytically decomposes on the Al surface, which would explain the high selectivity observed.