Tungsten as a marker in thin-film diffusion studies

Abstract

Vacuum-deposited tungsten of about 30-Å thickness has been used as a diffusion marker in the reaction between a thin Co film and Si. In order to produce a discontinuous W film, it is necessary first to deposit a Sn film with island structure and then W, after which the Sn is dissolved. It was found by MeV He+ backscattering analysis that the W is located at the Co-Co2Si interface, which means that Co is the dominant diffuser in Co2Si.