Publication | Closed Access
Enhanced Radiation Hardness of InAs/GaAs Quantum Dot Structures
45
Citations
6
References
2001
Year
PhotoluminescenceEngineeringPhysicsQuantum DeviceEnhanced Radiation HardnessApplied PhysicsQuantum DotsDefect ReactionsOptoelectronicsCompound SemiconductorMev Electron IrradiationSemiconductor Nanostructures
The quenching of photoluminescence in InAs/GaAs quantum dots and quantum wells by 2 MeV electron irradiation is investigated. We demonstrate a much higher radiation hardness of the quantum dots. Possible mechanisms of this phenomenon are discussed in terms of the wavefunction localization and defect reactions.
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