Γ-<i>X</i> intervalley tunneling in InAs/AlSb resonant tunneling diodes

Abstract

We present an experimental study of intravalley and intervalley transport in an InAs/AlSb/InAs/AlSb/InAs double barrier resonant tunneling diode at liquid helium temperatures. This work reports the first observation of intervalley tunneling through an InAs Γ-point quasibound state confined by AlSb X-point barriers. The incident energy of tunneling electrons was tuned by a transverse magnetic field (0&amp;lt;B&amp;lt;17 T). Self-consistent calculations of the current-voltage relation and a model that includes a transverse wave vector contribution to the magnetic field behavior of the resonances are used to describe the experimental results. From this, we determine that the device current is composed of Γ-point InAs electrons tunneling through X-point AlSb barriers (with large longitudinal effective mass) as well as Γ-point AlSb barriers.