High‐Performance Programmable Memory Devices Based on Co‐Doped BaTiO₃

Abstract

Non-volatile memory cells using Co-doped BaTiO3 as an active layer exhibit high-performance unipolar resistive switching characteristics, with a resistance ratio over 104, retention time longer than 7 × 104 s, endurance over 105 cycles, and switching speed less than 10 ns/70 ns for SET/RESET. Under high electric field and large Joule heating, the easily varied valence of Co ions, the pre-existing oxygen vacancies with sufficiently high density, and the local itinerant electrons introduced by the Co-doping all favor the local metal-insulator phase transition and therein the formation/rupture of conductive filaments, contributing to the stable resistive switching.