Deep electron traps in undoped, molecular beam epitaxially grown ZnSe

Abstract

Deep electron traps in normally undoped, low resistivity, molecular beam epitaxially grown ZnSe layers have been investigated by deep level transient spectroscopy. Two dominant deep electron traps with activation energies of 0.34 and 0.54 eV were observed. The former trap, whose trap concentration is independent of the carrier concentration in the grown layers, is attributed to a native defect arising from Se vacancy, while the latter, whose trap concentration increases with an increase in carrier concentration, is ascribed to the complex center associated with donor impurities incorporated during growth by evaporation of a Se source material.