Concepedia

High luminous flux semiconductor wafer-bondedAlGaInP/GaP large-area emitters

F. A. Kish, D.A. DeFevere, D. A. Vanderwater, G.R. Trott, R. Weiss, J. S. Major

Electronics Letters · 1994 · 32 citations · 4 references

Concepts

EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLight SourcesLight-emitting DiodesWafer BondingWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsGallium Nitride Light-emitting DiodesLight-emitting DevicesPulsed OperationWafer-to-wafer Bonding

Abstract

Data are presented demonstrating the high luminous flux operation of large-area light-emitting diodes (LEDs) fabricated by semiconductor wafer bonding. These LEDs operating in the 600–615 nm region are shown to be capable of emitting luminous fluxes (output powers) of 84 lumen (265 mW) and 195 lumen (475 mW) under DC and pulsed operation, respectively.

References

4

Very high-efficiency semiconductor wafer-bonded transparent-substrate (Al<i>x</i>Ga1−<i>x</i>)0.5In0.5P/GaP light-emitting diodes

F. A. Kish, Frank M. Steranka, D.C. DeFevere et al. · Applied Physics Letters · 1994 · 258 citations

Engineering, Electrical Engineering, Materials Science +17

High performance AlGaInP visible light-emitting diodes

Chia-Chen Kuo, R. M. Fletcher, T. D. Osentowski et al. · Applied Physics Letters · 1990 · 217 citations

Engineering, Electrical Engineering, Materials Science +17

Wafer fusion: A novel technique for optoelectronic device fabrication and monolithic integration

Z. L. Liau, D.E. Mull · Applied Physics Letters · 1990 · 186 citations

Engineering, Electrical Engineering, Materials Science +17

Twofold efficiency improvement in high performance AlGaInP light-emitting diodes in the 555–620 nm spectral region using a thick GaP window layer

K. H. Huang, Jingxi Yu, Chia-Chen Kuo et al. · Applied Physics Letters · 1992 · 142 citations

Engineering, Electrical Engineering, Materials Science +17