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Room-Temperature Epitaxial Growth of Ni-Zn Ferrite Thin Films by Pulsed Laser Deposition in High Vacuum
30
Citations
6
References
1997
Year
Materials EngineeringMagnetismMaterials ScienceEpitaxial GrowthEngineeringCrystalline DefectsHigh VacuumCrystal Growth TechnologyOxide ElectronicsSurface ScienceApplied PhysicsRoom-temperature Epitaxial GrowthNi-zn FerritePlanar OrientationThin FilmsPulsed Laser DepositionMolecular Beam Epitaxy
Thin films of Ni-Zn ferrite have been epitaxially grown in situ on basal plane sapphires at room temperature by pulsed laser deposition in high vacuum. The films deposited at oxygen pressures of 1×10 -5 to 1×10 -6 Torr grew with spinel-type crystal structure and (111) planar orientation. X-ray phi scan analysis showed that the [110] direction in the (Ni, Zn)Fe 2 O 4 (111) plane is parallel to the [1100] direction in the sapphire (0001) plane. The films exhibited streaky reflection high-energy electron diffraction patterns, indicating excellent surface smoothness.
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