High-Speed and high-power vertical-cavity surface-emitting lasers based on InP suitable for telecommunication and gas sensing

Abstract

We present 1.55 μm short-cavity buried-tunnel-junction VCSELs (Vertical-Cavity Surface-Emitting Lasers) with single mode output powers of 6.7 mW at 20°C and 3 mW at 80°C, respectively. Although the device had been predominantly optimized for high-power applications and a proper heat management, we are also observing a 3dB-cut-off frequency of more than 11 GHz and side mode suppression ratios (SMSRs) beyond 54 dB over the whole temperature range. The tuning range of the devices can be increased from 7 nm based on gain tuning to several tens of nanometers when replacing the top DBR by a micro-electro-mechanical system (MEMS) distributed Bragg reflector (DBR) composed of semiconductor or dielectric material being thermally actuated for changing the cavity length. These devices are perfectly suitable for telecommunication and gas sensing applications and represent outstanding devices for the so called tunable diode laser absorption spectroscopy (TDLAS) technique.