IEEE Photonics Technology Letters · 1993 · 10 citations · 3 references
EngineeringElectrical EngineeringPhysicsMicroelectronicsOptoelectronicsPhotonicsHigh-frequency Semiconductor DevicesIntegrated OpticsOptical Communication SystemsOptoelectronic DevicesPhotodetectorsPhotonic Integrated CircuitsCutoff FrequencyDetector Quantum EfficiencyFabricationOptical TransmissionP-i-n PhotodetectorsPhotodiode ArraysPhotodiodesQuantum Efficiency
A back-illuminated planar GaInAs/InP p-i-n photodiode array with a simple fabrication process was developed for application to parallel optical transmission. Four p-i-n photodiodes were integrated in the array. The average capacitance and dark current were as low as 0.12 pF and 8 pA, respectively, at -5 V. At a 1.55- mu m wavelength, the quantum efficiency of each photodiode was over 80%. The cutoff frequency was 8-10 GHz with four photodiodes when the bias voltage was -3 V and the load resistance was 50 Omega . Crosstalk between channels was -12 dB at the cutoff frequency and -45 dB at 1 GHz.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
3
Optical Interconnects For High Speed Computing
P. R. Haugen, S. J. Rychnovsky, A. Husain et al. · Optical Engineering · 1986 · 119 citations
Engineering, Computer Engineering, Electrical Engineering +17