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GaAlAs buried-heterostructure lasers grown by a two-step MOCVD process
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1983
Year
Electrical EngineeringEngineeringHigh-frequency ModulationSemiconductor LasersApplied PhysicsGaalas Buried-heterostructure LasersRelaxation Resonance EffectsPulsed Laser DepositionMicroelectronicsPlanar Surface StructureOptoelectronicsCategoryiii-v SemiconductorCompound Semiconductor
The fabrication and characterisation of GaAlAs buried-heterostructure laser diodes having low threshold currents (10 mA), high uniformity and planar surface structure, and grown exclusively by metalorganic chemical vapour deposition (MOCVD) are described. Single-longitudinal and transverse-mode operation of these devices has been observed. In addition, considerable suppression of relaxation resonance effects has been observed in the high-frequency modulation of these devices.