Applied Physics Letters · 1987 · 211 citations · 12 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsPhotonicsSemiconductor DevicesCarrier TransportDevice ReliabilityIon ImplantationCarrier DynamicsCarrier LifetimeCarrier Lifetime MeasurementIon Implantation EffectsTrap KineticsTrap MechanismsTrapping Effects
We have measured the dependence of the free-carrier lifetime on O+ ion-implantation dose in silicon-on-sapphire. At low implant doses, the carrier trapping rate increased linearly with the trap density introduced by ion implantation. At doses above 3×1014 cm−2 the measured carrier lifetime reached a limit of 600 fs.
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Generation of subpicosecond electrical pulses on coplanar transmission lines
M. B. Ketchen, D. Grischkowsky, T. C. Chen et al. · Applied Physics Letters · 1986 · 232 citations