Carrier lifetime versus ion-implantation dose in silicon on sapphire

Abstract

We have measured the dependence of the free-carrier lifetime on O+ ion-implantation dose in silicon-on-sapphire. At low implant doses, the carrier trapping rate increased linearly with the trap density introduced by ion implantation. At doses above 3×1014 cm−2 the measured carrier lifetime reached a limit of 600 fs.