Large Tunnel Magnetoresistance in Epitaxial Oxide Spin‐Filter Tunnel Junctions

Abstract

Abstract A high‐performance spin filter tunnel junction composed of an epitaxial oxide heterostructure is reported. By independently controlling the magnetic orientations of ferromagnetic tunnel barrier and electrode layers, a tunnel magnetoresistance ratio exceeding 120% is obtained purely by the spin filtering effect. A newly introduced spin filter material, Pr 0.8 Ca 0.2 Mn 1‐ y Co y O 3 , is shown to be useful for building novel multibarrier spintronic tunnel devices due to its composition‐controlled magnetic hardness.