ALD (HfO2)x(Al2O3)1−x high-k gate dielectrics for advanced MOS devices application - Concepedia

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ALD (HfO2)x(Al2O3)1−x high-k gate dielectrics for advanced MOS devices application

42

Citations

2

References

2004

Year

H.Y. Yu, M.F. Li, Dim‐Lee Kwong

Thin Solid Films

Semiconductor TechnologyElectrical EngineeringEngineeringOxide ElectronicsApplied PhysicsTime-dependent Dielectric BreakdownMicroelectronicsHigh-k Gate DielectricsSemiconductor Device

References

	Year	Citations

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