Melanin Layer on Silicon: an Attractive Structure for a Possible Exploitation in Bio‐Polymer Based Metal–Insulator–Silicon Devices

Abstract

Synthetic melanin based metal–insulator–semiconductor devices are fabricated for the first time thanks to silicon surface wettability modification by using dielectric barrier discharge plasma. Ambipolar charge trapping in air and ion drift mechanisms under vacuum are identified by capacitance–voltage hysteresis loops. These results aim to foresee the possible integration of synthetic melanin layers as a novel capacitor in organic polymer based devices. Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.