Self-electro-optic effect device and modulation convertor with InGaAs/InP multiple quantum wells

Abstract

We report the first observation of the self-electro-optic effect in InGaAs/InP multiple quantum wells, grown by organometallic vapor phase epitaxy. Clear bistability and switching are observed over a range of 40 nm around 1.61 μm with 20–30 V bias. We demonstrate the operation of a modulation convertor, which converts a modulation from a carrier at 1.6 μm onto a carrier at 0.85 μm and vice versa.