Characterization of photoluminescence intensity and efficiency of free excitons in semiconductor quantum well structures

Abstract

The photoluminescence (PL) intensity of free excitons in a GaInAsSb/GaAlAsSb single quantum well structure is investigated as a function of excitation intensity and lattice temperature. The relationship between PL intensity of free excitons and excitation intensity as well as lattice temperature was developed for the quantitative descriptions of the experimental data.