Broadband high-efficiency monolithic InGaP/GaAs HBT power amplifiers for wireless applications

Abstract

In this article, a broadband approach to high-efficiency power amplifier performance, based on the parallel-circuit Class E mode, is discussed. Results for a practical implementation of multi-band and multi-mode handset power amplifiers are shown. Measurements demonstrate the feasibility of the concept for highly efficient operation of DCS1800, PCS1900, CDMA2000, and WCDMA. PAE is greater than 50% at 30 dBm output power in the DCS1800 and PCS1900 bands, as well as better than 38% at 27 dBm output power and an ACLR of −37 dBc is achieved for WCDMA operation. © 2003 Wiley Periodicals, Inc. Int J RF and Microwave CAE 13, 496–510, 2003.