Temperature dependence of the hole mobility in doped p-GaP

Abstract

The temperature dependence of hole mobility is investigated in Zn doped p-GaP solid-solution grown crystals. Experimentally the mobility is obtained using Hall effect measurements. An attempt is made to describe the mobility theoretically using the four usual and most important scattering mechanisms, i.e. scattering on polar optical and acoustical phonons, also on ionized and neutral impurities. This analysis is made in two models, supposing presence of one kind and then two kinds of holes and furthermore, different values of Hall factor are taken into account. The agreement between the experimental and theoretical results is not always good which shows first of all the importance of the application of the two-band model and also the influence of the Hall factor. [Russian Text Ignored]