Stimulated emission and time-resolved photoluminescence in rf-sputtered ZnO thin films

Abstract

Stimulated emission (SE) was measured from ZnO thin films grown on c-plane sapphire by rf sputtering. Free exciton transitions were clearly observed at 10 K in the photoluminescence (PL), transmission, and reflection spectra of the sample annealed at 950 °C. SE resulting from both exciton-exciton scattering and electron hole plasma formation was observed in the annealed samples at moderate excitation energy densities. The SE threshold energy density decreased with increasing annealing temperature up to ∼950 °C. The observation of low threshold exciton-exciton scattering-induced SE showed that excitonic laser action could be obtained in rf-sputtered ZnO thin films. At excitation densities below the SE threshold, time-resolved PL revealed very fast recombination times of ∼74 ps at room temperature, and no significant change at 85 K. The decay time for the SE-induced PL was below the system resolution of <45 ps.