Electrical properties of indium selenide single crystals

Abstract

Resistivity, Hall-effect, and space-charge---limited---current (SCLC) measurements were performed on InSe single crystals grown by the Bridgman-Stockbarger method. The electrical properties of the investigated samples are dominated by two donor centers at 0.10 and 0.34 eV. The latter donor influences the SCLC at room temperature. The conduction-band density-of-states effective mass was estimated to be $0.12{m}_{0}$. From the analysis of Hall-mobility data, carried out according to Schmid's model, an optical-phonon energy $\ensuremath{\hbar}{\ensuremath{\omega}}_{f}=0.022$ eV and the coupling constant $g\ensuremath{\simeq}0.5$ were found.