Blue stimulated emission from a ZnSe <i>p</i>-<i>n</i> diode at low temperature

Abstract

Laser diode structures have been fabricated using molecular beam epitaxy with iodine from an electrochemical source for the n-type doping and nitrogen from a plasma source for the p-type doping. CV profiling using electrochemical etching shows uniform p doping of 4×1017 cm−3 and n doping of 1×1018 cm−3. Under pulsed current excitation blue emission at 470 nm is observed at room temperature which increases in intensity at liquid helium temperatures. Above a current density threshold of 50 A cm−2 stimulated emission is observed between 448–473 nm with a complicated mode structure.