Dispersive Low-Temperature Transport in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>a</mml:mi></mml:math>-Selenium

Abstract

Transient hole transport in $a$-Se below 180 K is shown to be a stochastic process. The transition from the well-defined high-temperature transport with Gaussian dispersion to the low-temperature stochastic transport is not paralleled by a change in the activation energy of the hole drift velocity.