Physical Review Letters · 2011 · 92 citations · 29 references
EngineeringChemistryMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor MaterialsCarrier TransportDopingOrganic Electronic MaterialsOrganic SemiconductorsSemiconductor InterfacesSemiconductor PhysicsBand Tail StatesCharge Carrier RecombinationCharge RecombinationDoping In Organic SemiconductorsExcitonsHeterojunctionsInterfacial RecombinationSemiconductor Heterojunctions
We investigate the effect of molecular doping on the recombination of electrons and holes localized at conjugated-polymer-fullerene interfaces. We demonstrate that a low concentration of p-type dopant molecules (<4% weight) reduces the interfacial recombination via charge transfer excitons and results in a favored formation of separated carriers. This is observed by the ultrafast quenching of photoluminescence from charge transfer excitons and the increase in photoinduced polaron density by ~70%. The results are consistent with a reduced formation of emissive charge transfer excitons, induced by state filling of tail states.
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